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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTORNPN (c)
TO 92
FEATURES Power dissipation PCM : 1.25 W Tamb=25ae(c) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
1.BASE
2.COLLECTOR
3.EMITTER
123
unless
Test
otherwise
MIN
specified(c)
TYP MAX UNIT V V V 100 200 100 |I A |I A |I A
conditions
Ic= 100|I =0 A IE IC= 1 mA , IB=0
600 400 7
IE= 100 |I IC=0 A VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , VCE= 20 IC=0
V, IC= 20m A
10 5
70
VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10m A VCE= 20 V, I =20mA C
0.5 1.2
V V
Transition frequency
f
T
8
MHz
f = 1MHz
Fall time Storage time
t
f
IC=50mA, IB1=-IB2=5mA, VCC=45V
0.3 1.5
|I s |I s
tS
CLASSIFICATION OF hFE(1)
Range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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